P0860JF N-channel power MOSFETs
By Niko Semiconductor Co., Ltd. (尼克森微電子股份有限公司)
P0860JF is an N-channel enhancement-mode MOSFET in a TO-220F package.
Specifications
| Attribute | Value | Conditions | Source |
|---|---|---|---|
| Drain-source absolute maximum voltage | 600 V | Original absolute-maximum table at TA = 25 °C unless otherwise noted; not a recommended continuous operating point. | Official P0860JF product information |
| Gate-source absolute maximum voltage | ±30 V | Absolute maximum, not a recommended gate-drive voltage. | Official P0860JF product information |
| Continuous drain-current absolute maximum | 8 A | TC = 25 °C; original junction-temperature limitation still applies. This case-temperature rating is not an ambient-current guarantee. | Official P0860JF product information |
| Package | TO-220F | Exact package printed on the original model datasheet; thermal mounting and insulation require the package drawing. | Official P0860JF product information |
Applications
- Electronic circuits using an N-channel enhancement-mode field-effect transistor
Sources and updates
Scope of this page: Only the P0860JF model/series and the listed source-supported attributes. Series maximums or model-dependent ranges are identified in the conditions; options and prices are not inferred. All listed electrical limits are absolute maximums, not simultaneous recommended operating conditions. Application suitability and derating require the original thermal/electrical curves and footnotes. No end-product safety approval, availability or substitute compatibility is asserted.
Official P0860JF product information
Original publication · Niko Semiconductor Co., Ltd. (尼克森微電子股份有限公司)
Source accessed: 27 October 2026
Content updated 27 October 2026. Source dates describe the documents or the recorded access to them.
How information is documented